英飛凌全球?qū)捊麕?a target="_blank">開(kāi)發(fā)者論壇連續(xù)多年舉辦，匯集了來(lái)自碳化硅SiC和氮化鎵GaN領(lǐng)域的專(zhuān)家，更有一個(gè)來(lái)自中國(guó)客戶(hù)的特邀報(bào)告。2025年3月11日北京時(shí)間下午4點(diǎn)，我們將在慕尼黑演播室全天直播，干貨滿(mǎn)滿(mǎn)等你來(lái)！

（您可以在直播中聽(tīng)到全球前沿的產(chǎn)品與應(yīng)用實(shí)例分享。）

注：請(qǐng)?jiān)?025年3月10日之前掃碼報(bào)名。

報(bào)名后，您將收到一封確認(rèn)電子郵件，內(nèi)含當(dāng)天直播觀(guān)看鏈接。

寬禁帶(WBG)解決方案憑借更高的功率密度和更小的體積，能大幅提升能源效率，是可持續(xù)設(shè)計(jì)的關(guān)鍵。我們期待與您在直播中交流全球前沿科技、產(chǎn)品和應(yīng)用實(shí)例，碰撞思維的花火。

英飛凌科技零碳工業(yè)功率事業(yè)部總裁Dr. Peter Wawer和英飛凌科技電源與傳感系統(tǒng)事業(yè)部總裁Adam White將發(fā)表主題演講，正式開(kāi)啟活動(dòng)，并帶來(lái)關(guān)于市場(chǎng)發(fā)展和英飛凌寬禁帶戰(zhàn)略的精彩分享。

Dr. Peter Wawer

英飛凌科技零碳工業(yè)功率事業(yè)部總裁

Adam White

英飛凌科技電源與傳感系統(tǒng)事業(yè)部總裁

議程亮點(diǎn)：

特邀國(guó)內(nèi)外客戶(hù)分享項(xiàng)目應(yīng)用實(shí)例

解密為何CoolSiC跟CoolGaN能成為太陽(yáng)能、儲(chǔ)能、逆變器設(shè)計(jì)和車(chē)載充電等應(yīng)用的完美解決方案？

線(xiàn)上問(wèn)答環(huán)節(jié)，實(shí)時(shí)交流，不容錯(cuò)過(guò)

讓我們一起釋放SiC和GaN的全部潛力！為了給您帶來(lái)最大的設(shè)計(jì)靈活性，我們提供全系列的寬禁帶（WBG）功率半導(dǎo)體，包括分立器件、模塊和高度集成的解決方案，涵蓋從40V到700V氮化鎵產(chǎn)品（GaN）和400V到3.3kV碳化硅產(chǎn)品（SiC）。

最新日程（北京時(shí)間）：

16:00 – 16:05

Welcome and introduction

Dr. Peter Friedrichs, Fellow
Eva Gabriel, Director Product Marketing SiC

16:05 – 16:30

Opening Keynote – Expanding ourleadership in power systems through Wide Bandgap

Dr. Peter Wawer

Division President Green Industrial Power

Adam White

Division President Power & Sensor Systems

16:30– 17:00

SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

17:00 – 17:30

Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

17:30 – 18:00

Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

18:00 – 18:30

SiC 2.3 kV power modules asenabler towards a clean energy transition –examples for wind and energy storage systems

Dr. Marcel Morisse

Principal Engineer High Power Modules

18:30 – 19:00

SiC .XT interconnect: enabling SiC for long lifetime in high power applications

Dr. Torsten Methfessel

Principal Engineer Quality & Reliability

19:00 – 19:30

Challenges and solutions to power latest AI processorgenerations for hyperscale data centers

Dr. Matthias Kasper

Lead Principal Engineer at System Innovations Lab

19:30 – 20:00

Dinner break (Beijing time)

20:00 – 20:30

Why GaN in Photovoltatics?

Richard Brace

BRC Solar, Head of Innovation and Research

20:30 – 21:00

Driving the future of Motor Control with 650V GaN

Ariza Javier

Principal System Application Engineer power conversion

21:00 – 21:30

Highly integrated coin-sized 1 kW GaN-based motor drive

Dr. Edward A. Jones

Principal Engineer in GaNApplication Development

Dr. Maurizio Incurvati

LeadPrincipal Engineer System Architect for Innovation in Motor Drives

21:30 – 22:00

GaN Monolithic Bi-directional Switch - A New Paradigm in Power Electronics

Dr. Kennith K. Leong

Lead Principal, Product Definition and Concept Engineer for CoolGaN HV BDS

22:00 – 22:15

15 Min. Coffee break

22:15 – 22:45

Value Proposition of GaN in OBC

Lucas Lu

Senior Director Technical Marketing GaN Auto

22:45 – 23:15

Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

23:15 – 23:45

Automotive & Industrial MCUs for Software-controlledhigh Density Power Conversion’

Dr. Jürgen Stahl

Principal System Engineering

Klaus Scheibert

Senior Principal PT&xEV